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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-220F package Complement to type 2SA1469 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electronic equipment Inverters ,converters Switching regulator ,driver
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SC3746
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM

PARAMETER
Fig.1 simplified outline (TO-220F) and symbol
CHA IN
Collector current
Collector-base voltage
E SEM NG
Open base
OND IC
CONDITIONS
TOR UC
VALUE 80 60 5 5 7
UNIT V V V A A
Open emitter
Collector-emitter voltage
Emitter-base voltage
Open collector
Collector current-peak Ta=25ae
2 W 20 150 -55~150 ae ae
PC
Collector dissipation TC=25ae
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ;RBE= IC=10mA ;IE=0 IE=10mA ;IC=0 IC=2.5A;IB=0.125A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 60 80 5
2SC3746
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
0.4 0.1 0.1 280
V mA mA
Switching times ton ts tf
Fall time
Turn-on time Storage time

CHA IN
R 100-200 S
E SEM NG
IC=2.0A; IB1=-IB2=0.1A VCC=20V ,RL=10|
OND IC
TOR UC
0.1 0.5 0.1
MHz
|I |I |I
s s s
hFE Classifications Q 70-140
140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3746

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3746

CHA IN
E SEM NG
OND IC
TOR UC
4


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